jayce3390
Full Member level 6
Hello,
I am modeling a GaN power transistor, I think use RC array as temperature room to modelate the effect of temperature on GaN device.
When you put supply voltage to the transistor, Id current decreases during time pulse and then from data you can extract behavioural model.
Is it possible to use another way to get it?
I am modeling a GaN power transistor, I think use RC array as temperature room to modelate the effect of temperature on GaN device.
When you put supply voltage to the transistor, Id current decreases during time pulse and then from data you can extract behavioural model.
Is it possible to use another way to get it?