So you really applied yourself to searching, and found nothing
at all on one of the most common memory cells?
It's just a pair of weak cross-coupled inverters and a pair of
strong CMOS pass-gates.
If you're not charged (heh) with designing the sense amp,
row/colum drivers and such, I'd say to concentrate on
showing that you have driven the limited design variables
to a local optimum of write margin, write time and write
charge, maybe static leakage, and provide some sense
of temperature and supply sensitivities.
But, gee, that is starting to look like some effort.