Hi! Does anybody know of any recent paper/book showing the evolution of transistor intrinsic gain (gm*ro) with minimum channel length (=technology node)?
So far I've only found the graph below [1], but I'm looking for other references showing the same trend (i.e. that things get better in 22nm and below (FinFETs)).
Thanks in advance for any help!
[1] Holt, "Moore’s Law: A Path Going Forward", ISSCC'16
There's a lot more to it than just u0CoxW/L (and three, at
least, moving at once for different influences).
Advanced technologies add all sorts of features to get an
"acceptable" reliability - LDD and halo details in the source
region can degrade gm a lot (you'll see RF folks fight for
their own, "not digital", transistor since they don't care
about DC leakage in an "off" device and can't stand source
resistance).