For that purpose, we investigated devices having a structure as shown in Figure 2a: SOI-FETs with the channel pat- terned by an electron beam lithography technique to have a width of about 50 nm and a length between 20 and 150 nm [see Figure 2b]. Top Si layer has a final thickness of only 10 nm and is doped uniformly with phosphorus to a concentration ND ≅ 1 × 1018 cm-3 (as estimated from secondary ion mass spectrometry of reference samples). A simple estimation would give a number of 10 to approximately 75 dopant atoms in the device channel, depending on the channel dimensions.