abhijitrc
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What is the role of Dgd ( diode at gate and drain ) in large signal model ?
Since in HEMT/MESFET the equivalent lumped circuit model shows two diodes , one at gate-source side and another at drain-source side!,since both are diodes how the device amplification takes place....
1. S-parameter extraction of the device is showing positive value of S21 at some bias points, but as we know diodes are passive, how we are getting appreciable gain,ie, 20logS21 shows voltage gain ????????, plz help me to sort out the problem.
Since in HEMT/MESFET the equivalent lumped circuit model shows two diodes , one at gate-source side and another at drain-source side!,since both are diodes how the device amplification takes place....
1. S-parameter extraction of the device is showing positive value of S21 at some bias points, but as we know diodes are passive, how we are getting appreciable gain,ie, 20logS21 shows voltage gain ????????, plz help me to sort out the problem.