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NHV - NHVNATIVE mos transistors

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Ahmed Abd El Wahab

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Hi all,
I'm a bit new in analog design. I'm currently working on a Low power Voltage Reference (Band-Gap) circuit on Cadence.
I'm working from a paper introducing some interesting architectures for that. The problem I'm facing is this structure uses 130-nm technology devices called NHV - NHVNATIVE mos transistors.
I have tried to find any info about these devices ,but found nothing.
hint:
- If any one could even tell what is the PDK (Design kit) in which these devices are found would definately help.
- you will find the paper I'm using attached below
 

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  • 05206158.pdf
    459 KB · Views: 61

NHV is likely the thicker gate ox ("I/O devices") and NHVNATIVE
the same minus the channel adjust implant, a sorta-zero-VT
NMOS. Not negative like the depletion mode they refer to,
more like intrinsic.

Now this device would not be realizable in a P- bulk technology
without a counter implant or crossing up the gate doping shot.
So some of these designs may not be widely portable, or have
to accept some added headroom to work, in simpler or less
cooperative foundry flows.
 

Do you, please, have any curves for their I-V characteristics ?
Do you know which [PDK - TSMC Design kit] can I find them to be able to simulate these devices on cadence?
 

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