I cannot see how a model of the 2110 can be so accurate that it takes into account the dv/dt experienced by the internal level shift circuitry when the Vout low side is pulled down rapidly by virtue of the fet it is connected to switching on...this is the difference between real world silicon and a black box model... as the above posters say, if using the opto-couplers there is now no real advantage in using the 2110 any more...
using opto-coupler with TIP122 transistor has also led to IGBT failure
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