Hi all, i am having problem in my SOI TFET simulation. The drain current is very low(1e-10), does anyone knows what i can do to increase the Id(to 1e-5)? I am confuse on which model i should used for physic section(Sdevice simulation) for tunneling fets.
Enclosed is the expected result and the result obtained(IDVDS). Here is my coding for SOI TFETs for physic section:
I am also doing SOI TFET simulation. My physics section is similar to yours. But my drain current does not seem to be right, it has a very unusual shape. I am not sure what I am doing wrong. Can you please share your parameter file? I have followed the SOIFET example to build my SOI TFET.