Hi fragment,
I am sorry I didn't describe in detail.
The situation is, when I was doing short circuit TESTs, the IC is biased at trickle condition.
1) VIN=+5V, VBAT=0V(in trickle charge condition), TEMP=1.5V(normal condtion).
2) I used a metal wire to short VBAT and TEMP, there is a large current(2A, current limited by 1.5V supply) flow into E-load. This should be normal condition because E-load should sink the current.
3) When I try to touch on and off the metal wire(to let the VBAT and TEMP switch between short and open condition), IC was burned down. I de-cap the IC and found the damaged place is near the Source of the power PMOS.
I have no idea why it happened because during normal operations, the current is more then 1A, and the chip works well.
Please help me.
Thank you very much!