shiva_vlsi
Newbie level 4
Hi
Can any one clarify my doubts.....
1) Is it possible to use different threshold voltage MOS transistors in one design,I mean for example consider a CMOS full adder can i use PMOS transistors with different Vthp i.e, Vthp1=-0.65v,Vthp2=-0.5v NMOS transistors with different Vthn i.e, Vthn1=-0.45v,Vthn2=-0.45v.
Is it acceptable Or Is there any rule that all the PMOS devices in the design shud have same Vhp and all NMOS devices in the design shud have same Vhn.
2) Generally in the designs the critical path transitors have the large dimensions and low Vth to minimize the critical path delay.
Then How to change the Vth of these critical path transistors.Can we change it manually in the SPICE parameters.
How to design variable threshold (with dynamic body bias generation) circuit .
Thanks
Can any one clarify my doubts.....
1) Is it possible to use different threshold voltage MOS transistors in one design,I mean for example consider a CMOS full adder can i use PMOS transistors with different Vthp i.e, Vthp1=-0.65v,Vthp2=-0.5v NMOS transistors with different Vthn i.e, Vthn1=-0.45v,Vthn2=-0.45v.
Is it acceptable Or Is there any rule that all the PMOS devices in the design shud have same Vhp and all NMOS devices in the design shud have same Vhn.
2) Generally in the designs the critical path transitors have the large dimensions and low Vth to minimize the critical path delay.
Then How to change the Vth of these critical path transistors.Can we change it manually in the SPICE parameters.
How to design variable threshold (with dynamic body bias generation) circuit .
Thanks