[Moved]: resistance calculation in mos

[arpitsrm69]

.MODEL CMOSP1 PMOS(LEVEL=7 MOBMOD=1.000e+00 CAPMOD=2.000e+00 NLEV=0
+VTO = -1.0V KP = 8U GAMMA= 0.6 LAMBDA = 0.008 PHI = 0.6
+NOIMOD=1.000e+00 K1=5.675e-01 K2=-4.39e-02 K3=4.454e+00 K3B=-8.52e-01 NCH=1.032e+17
+VTH0=-6.17e-01 VOFF=-1.13e-01 DVT0=1.482e+00 DVT1=3.884e-01 DVT2=-1.15e-02 
+KETA=-2.56e-02 PSCBE1=1.000e+09 PSCBE2=1.000e-08 DVT0W=0.000e+00 DVT1W=0.000e+00
+DVT2W=0.000e+00 UA=2.12e-10 UB=8.290e-19 UC=-5.28e-11 U0=1.296e+02 DSUB=5.000e-01
+ETA0=2.293e-01 ETAB=-3.92e-03 NFACTOR=8.237e-01 EM=4.100e+07 PCLM=2.979e+00 
+PDIBLC1=3.310e-02 PDIBLC2=1.000e-09 DROUT=5.000e-01 A0=1.423e+00 A1=0.000e+00
+A2=1.000e+00 PVAG=0.000e+00 VSAT=2.000e+05 AGS=3.482e-01 B0=2.719e-07 B1=0.000e+00
+DELTA=1.000e-02 PDIBLCB=-1.78e-02 W0=4.894e-08 DLC=4.000e-09 DWB=0.000e+00
+DWG=0.000e+00 LL=0.000e+00 LW=0.000e+00 LWL=0.000e+00 LLN=1.000e+00 LWN=1.000e+00
+WL=0.000e+00 WW=0.000e+00 WWL=0.000e+00 WLN=1.000e+00 WWN=1.000e+00 AT=3.300e+04
+UTE=-1.35e+00 KT1=-5.70e-01 KT2=2.200e02 KT1L=0.000e+00 UA1=0.000e+00 UB1=0.000e+00
+UC1=0.000e+00 PRT=0.000e+00 CGDO=7.420e-11 CGSO=7.420e-11 CGBO=1.100e-10 CGDL=1.290e-10
+CGSL=1.290e-10 CKAPPA=6.000e-01 CF=0.000e+00 ELM=5.000e+00 XPART=1.000e+00
+CLC=1.000e-15 CLE=6.000e-01 RDSW=1.853e+03 CDSC=6.994e-04 CDSCB=2.943e-04
+CDSCD=1.970e-04 PRWB=0.000e+00 PRWG=0.000e+00 CIT=1.173e-04 TOX=7.700e-9
+NGATE=0.000e+00 NLX=1.77e-07 ALPHA0=0.000e+00 BETA0=3.000e+01 AF=1.290e+00
+KF=1.090e-27 EF=1.000+00 NOIA=1.000e+20 NOIB=5.000e+04 NOIC=-1.40e-12 LINT=-8.14e-08
+WINT=3.845e-08 XJ=3.000e-07 RSH=1.560e+02 JS=2.000e-05 CJ=1.420e-03 CJSW=3.800e-10
+CBD=0.000e+00 CBS=0.000e+00 IS=0.000e+00 MJ=5.500e-01 N=1.000e+00 MJSW=3.900e-01
+PB=1.020e+00 TT=0.000e+00 PBSW=1.020e+00)
*
.MODEL CMOSN1 NMOS(LEVEL=7 MOBMOD=1.000e+00 CAPMOD=2.000e+00 NLEV=0
+VTO = 1.0V KP = 8U GAMMA= 1.3 LAMBDA = 0.01 PHI = 0.7
+NOIMOD=1.000e+00 K1=6.044e-01 K2=2.945e-03 K3=-1.72e+00 K3B=6.25e-01 NCH=2.31e+17
+VTH0=4.655e-01 VOFF=-5.72e-02 DVT0=2.227e+01 DVT1=1.051e+00 DVT2=3.393e-03 
+KETA=-6.21e-04 PSCBE1=2.756e+08 PSCBE2=9.645e-06 DVT0W=0.000e+00 DVT1W=0.000e+00
+DVT2W=0.000e+00 UA=1.000e-12 UB=1.723e-18 UC=5.756e-11 U0=4.035e+02 DSUB=5.000e-01
+ETA0=3.085e-02 ETAB=-3.95e-02 NFACTOR=1.119e-01 EM=4.100e+07 PCLM=6.831e-01 
+PDIBLC1=1.076e-01 PDIBLC2=1.453e-03 DROUT=5.000e-01 A0=2.208e+00 A1=0.000e+00
+A2=1.000e+00 PVAG=0.000e+00 VSAT=1.178e+05 AGS=2.49e-01 B0=-1.76e-08 B1=0.000e+00
+DELTA=1.000e-02 PDIBLCB=2.583e-01 W0=1.184e-07 DLC=4.000e-09 DWB=0.000e+00
+DWG=0.000e+00 LL=0.000e+00 LW=0.000e+00 LWL=0.000e+00 LLN=1.000e+00 LWN=1.000e+00
+WL=0.000e+00 WW=0.000e+00 WWL=0.000e+00 WLN=1.000e+00 WWN=1.000e+00 AT=3.300e+04
+UTE=-1.80e+00 KT1=-3.30e-01 KT2=2.200e02 KT1L=0.000e+00 UA1=0.000e+00 UB1=0.000e+00
+UC1=0.000e+00 PRT=0.000e+00 CGDO=1.120e-10 CGSO=1.120e-10 CGBO=1.100e-10 CGDL=1.35e-10
+CGSL=1.350e-10 CKAPPA=6.000e-01 CF=0.000e+00 ELM=5.000e+00 XPART=1.000e+00
+CLC=1.000e-15 CLE=6.000e-01 RDSW=6.043e+02 CDSC=0.000e+00 CDSCB=0.000e+00
+CDSCD=8.44e-05 PRWB=0.000e+00 PRWG=0.000e+00 CIT=1.000e-03 TOX=7.700e-9
+NGATE=0.000e+00 NLX=1.918e-07 ALPHA0=0.000e+00 BETA0=3.000e+01 AF=1.400e+00
+KF=2.81e-27 EF=1.000+00 NOIA=1.000e+20 NOIB=5.000e+04 NOIC=-1.40e-12 LINT=-1.67e-08
+WINT=2.676e-08 XJ=3.000e-07 RSH=8.200e+01 JS=2.000e-05 CJ=9.300e-04 CJSW=2.800e-10
+CBD=0.000e+00 CBS=0.000e+00 IS=0.000e+00 MJ=3.100e-01 N=1.000e+00 MJSW=1.900e-01
+PB=6.900e-01 TT=0.000e+00 PBSW=6.900e-01)
*
M01 1 2 3 3 CMOSN1 (W=1.4U L=0.35U)
M02 3 4 1 1 CMOSP1 (W=1.4U L=0.35U)  
VIN1 1 0 0.545V
VIN2 3 0 0V

VP 4 0 -0.9V
VN 2 0 0V
.DC VIN1 -550MV 550MV 50MV   VN 0.25V 2.5V 0.5V 
.PROBE
.OP
.OPTION STEPGMIN  
.END

plz explain calculation of resistance theoretically formula is

R= 1/ k0(vn-vp-vtn+vtp)

ko is tranconductace.
plz help me.

 

[erikl]

If you actually want to keep it theoretical:

vtn = VTO(NMOS) (from your SPICE file)
vtp = VTO(PMOS) (from your SPICE file)
VP, VN of your SPICE file voltage sources VP & VIN1 determine the operation point parameters vp, vn of your equation.

k0 = µ0*C'_ox = µ0 * ε₀*ε(SiO₂)/TOX

µ0 = U0 (from your SPICE file, different for NMOS & PMOS)
ε₀ = 8.854e-12 As/Vm
ε(SiO₂) = 3.9
TOX = TOX (from your SPICE file, same for NMOS & PMOS)

But don't expect the result corresponds too closely with simulation or measurement results!