I'm currently designing a rectifier to be used for our RF energy harvester. Along the way, I found out that the fully cross-coupled configuration is the reference design of the latest rectifier designs. I was confused though of the correct connection of the terminals of the rectifying transistors, particularly the Source and Drain terminals. I researched and found these two figures which have different connection of the transistor terminals, though it may looked the same at a quick look. My question is, which of these is right?
However consider area of source and drain in multi finger configuration.
I recommend smaller area terminal should be connected to RF input.
Generally I call smaller area terminal drain.
And if we consider where body of MOS FET is connected, https://www.edaboard.com/attachment.php?attachmentid=147209&d=1528895295 is appropriate.
However consider area of source and drain in multi finger configuration.
I recommend smaller area terminal should be connected to RF input.
Generally I call smaller area terminal drain.
And if we consider where body of MOS FET is connected, https://www.edaboard.com/attachment.php?attachmentid=147209&d=1528895295 is appropriate.
By the way, another question. How can source and drain differs in area in multi-finger configuration? How is drain or why can you say that the drain is the smaller area terminal?
pancho_hideboo, thanks for the reply. By the way, is there any reference or text book you can refer me to read?
Drain is hot node said:
I tried searching for the drain being the hot node and source being the cold node but I can't any reference of help. Is there any reference you can also recommend with these?
Thanks you so much pancho_hideboo. I did really learned a lot of new stuffs from you.