diamadiss
Member level 1
Hello,
I want to on/off a P-Channel mosfet with car's ignition switch. As I know the voltage of the car when it is engaged is 14Volt and contains voltage spikes mostly of the alternator basically. After a search on the internet i found that a way to protect the gate of the mosfet is to add a TVS diode parallel to gate-source. Does anyone know if this solution is suitable in order to cut all the voltage spikes from the mosfet's gate (overvoltage on gate can destroy/puncture the thin oxide of the gate)?
The TVS "P6SMB18AT3G" according to the datasheet have "Response Time is Typically < 1 ns". Is this TVS suitable from the aspect of time?
Is this TVS suitable from the aspect of Vbr=18V or it would be better if I put a TVS with vbr=16V?
P6SMB18AT3G:
https://www.mouser.com/ds/2/308/P6SMB6.8AT3-D-99834.pdf
I want to on/off a P-Channel mosfet with car's ignition switch. As I know the voltage of the car when it is engaged is 14Volt and contains voltage spikes mostly of the alternator basically. After a search on the internet i found that a way to protect the gate of the mosfet is to add a TVS diode parallel to gate-source. Does anyone know if this solution is suitable in order to cut all the voltage spikes from the mosfet's gate (overvoltage on gate can destroy/puncture the thin oxide of the gate)?
The TVS "P6SMB18AT3G" according to the datasheet have "Response Time is Typically < 1 ns". Is this TVS suitable from the aspect of time?
Is this TVS suitable from the aspect of Vbr=18V or it would be better if I put a TVS with vbr=16V?
P6SMB18AT3G:
https://www.mouser.com/ds/2/308/P6SMB6.8AT3-D-99834.pdf