MOSFET H-bridge gate driver

[Gaurav_1806]

Hello,

I am working on the electronic throttle control for automotive in which a DC motor is used to control the ETC throttle body valve and for that I am planning to design a H-bridge Gate driver which will gate the MOSFET and in case will control the MOTOR.

Now, I have certain question as follows,
1. How to decide the maximum VDS voltage of the MOSFETs in the bridge?
2. Motor back emf need to be considered while selecting the MOSFET and how to compensate on the back emf?
3. How the freewheeling concept will be considered for the selection MOSFET?

- - - Updated - - -

Hello,

Following are the inputs parameters with respect to above post
Parameters:
1. The H- bridge and DC motor is operated at 12Vdc
2. Motor inductance - 0.397mH
3. Motor Resistance - 8.8ohm

 

[Electro nS]

working on the safe side for automotive enviroment use :
1- vds 3*Vbus , 40v is good
2-no back emf is not an issue if u use syncronous rectification
3-also freewheeling diode or mosfet body diode is not an issue in syncronous rectification.

important note: accelarate and decelarate the motor slowly , this the most imporat subject , because if u give the motor 90% duty cycle from 0% or vise versa , huge voltage/cuurent spike will destry your bridge .
instead ramp up and ramp down ...