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MOS device: intrinsic gain

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EmbdASIC

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Which plot would truly characterize the intrinsic gain of a MOSFET for different nanometer CMOS processes:

1. gm/id VS. Veff (W/L=1)
2. gm/gds VS. gm/id

I want to compare the device characteristics for highest gain in various CMOS processes.

Thanks, and looking forward
 

gm/Id vs Inversion coeff. (IC) wil give the info.

But th aspect ratio need 2 b normalized so that comparison can be made.
 

thanks for your input. My personal opinion about gm/id vs. IC plot is, that it helps more for the correct sizing for a given current and it works with another plot gm/id vs Veff.

I am not sure if it should help find the maximum gain too ?
 

Hi guys.

Taking the advantage of this post I'd like to know what is the MOSFET Intrinsic gain and what sort of useful information it gives to us?
 

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