EmbdASIC
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Which plot would truly characterize the intrinsic gain of a MOSFET for different nanometer CMOS processes:
1. gm/id VS. Veff (W/L=1)
2. gm/gds VS. gm/id
I want to compare the device characteristics for highest gain in various CMOS processes.
Thanks, and looking forward
1. gm/id VS. Veff (W/L=1)
2. gm/gds VS. gm/id
I want to compare the device characteristics for highest gain in various CMOS processes.
Thanks, and looking forward