Breakdown voltage. The SPICE bipolar transistor models do not possess a breakdown voltage for any combination of terminals. This feature can be added within a subcircuit as above, by including a diode across the relevant terminals, with BV set to the minimum breakdown voltage specified on the transistor’s datasheet. However, this will only indicate that there is current flow under overvoltage or transient conditions - it will not of course model the effects this would have on a device. This includes effects such as hFE degradation due to reverse emitter-base current, heating and secondary breakdown effects, catastrophic breakdown of the gate oxide of MOSFETs, oscillation, and noise generation (at low values of avalanche current).