Continue to Site

Welcome to EDAboard.com

Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.

LTSpice simulation question

Status
Not open for further replies.

flabbergastt

Junior Member level 2
Junior Member level 2
Joined
Sep 16, 2014
Messages
20
Helped
0
Reputation
0
Reaction score
0
Trophy points
1
Visit site
Activity points
149
Hi,

I have a question about LTSpice, i'm still unfamiliar with what it can and cannot do.

Can LTSpice show errors for when something is exceeded? For example, a MOSFET drain to source voltage is being exceeded way too high? Or this must be known to the user beforehand?

thanks!
 

hi,
I have used LTS for a long time and its never raised an error message for the reasons you have stated.
Its upto you to read the datasheet for any device you are simulating and to be aware of its limitations.

Have you had any error messages you dont understand.?
E
 
hi,
I have used LTS for a long time and its never raised an error message for the reasons you have stated.
Its upto you to read the datasheet for any device you are simulating and to be aware of its limitations.

Have you had any error messages you dont understand.?
E

Hey esp1,

No error messages, but you answered my question. Thanks a lot!
 

When doing circuit simulations using SPICE, the modelling will not simulate breakdown voltages in traditional MOSFETs or BJTs.

See this old **broken link removed**

Zetex SPICE Models: Understanding Model Parameters and Applications Limitations by Neil Chadderton

I quote from it:

Breakdown voltage. The SPICE bipolar transistor models do not possess a breakdown voltage for any combination of terminals. This feature can be added within a subcircuit as above, by including a diode across the relevant terminals, with BV set to the minimum breakdown voltage specified on the transistor’s datasheet. However, this will only indicate that there is current flow under overvoltage or transient conditions - it will not of course model the effects this would have on a device. This includes effects such as hFE degradation due to reverse emitter-base current, heating and secondary breakdown effects, catastrophic breakdown of the gate oxide of MOSFETs, oscillation, and noise generation (at low values of avalanche current).
 
Status
Not open for further replies.

Similar threads

Part and Inventory Search

Welcome to EDABoard.com

Sponsor

Back
Top