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JFET and MOSFET low current and leakage limitations

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Max-dal

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Hello,

I am not so experienced in a low-current electronics and using transistors for usefull purposes in this area and I have not found anything in literature, so I'm looking for some help.

is it possible to use a MOSFET or JFET to ground a high impedance current source (positive ion detector) (range is about 1pA~30pA) if there is a very small S-D voltage difference? After switch off, can I expect unwanted leakage thru the transistor? The problem is depicted in the picture. The current flows in opposite direction, e.g. from the output into the detector, that means the current will flow from ground through the transistor toward the detector when in on-state.
scheme.JPG

Thanks for any help.

Max-dal
 

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