Hi, I was reading the paper "OPTIMUM DESIGN OF DISTRIBUTED POWER-FET AMPLIFIERS. APPLICATION TO A 2 - 18 GHz MMIC MODULE EXHIBITING IMPROVED POWER PERFORMANCES " and came across this
"As confirmed by experimental results on commercially available power FETs, the optimum output admittance of the FET is equivalent to a constant conductance Gopt in parallel with a constant capacitance Copt, over very wide bandwidths". Is it really possible for MOSFET and what exactly should I do to find the particular optimum impedance? Because loadpull would give different optimum impedances at different frequencies.