Continue to Site

Welcome to EDAboard.com

Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.

Is anybody doing research on models in terms of MOSFET mobility?

Status
Not open for further replies.

Alex Liao

Member level 4
Member level 4
Joined
Apr 8, 2013
Messages
75
Helped
2
Reputation
4
Reaction score
2
Trophy points
1,288
Visit site
Activity points
1,991
Hi,

I have investigated this following papper. Jiying Xue, et. al, "A Framework for Layout-Dependent STI Stress Analysis and Stress-Aware Circuit Optimization", IEEE Transactions, March 2012.

Actually I am interested in models reflect mobility, Vth and Isub. The case study of this paper has successfully showcased the error of performance between the one which considers no STI effect and the one does.

Is there anyone who knows how to acquire the variables/constants in equation 13.png (13) and 14.png(14)? (Especially the mhh and mhl, it seems these are mass in heavy/light energy band in channel)

If somebody can answer this I would appreciate that.

Regards,
 

Status
Not open for further replies.

Similar threads

Part and Inventory Search

Welcome to EDABoard.com

Sponsor

Back
Top