No, if you mean "use" in its intended in-line discharging
role. That role works because the same steps which
charge the metal during etch, throws enough UV and soft
X-rays that the diodes become photoconductive. They
do not need to be broken down (and in fact would fail
to protect a 0.8V gate ox altogether, if you have 6-7V
BV on the N+ / Pepi junctions which is the norm).
There should be PDK guidance on allowed reverse voltage.
That should be at least as high as the NFETs which use
that same junction (look to long channel I/O devices, as
lacking or minimizing some of the short-channel, thin-
oxide, spacer oxide hot carrier reliability detractors).