Yes.
In the case of mosfets you can design circuits by adjusting W and L. Bipolar design is different from mos. There are already made optimized transistor layout for bipolars, depending on application (i.e high speed, high voltage...). Only you can do is to select and connect more this bipolars in parallel, when you need greater current density, optimal β(Ic), or smaller base resistance. As a result bipolar design is usually concentrated on optimization of different circuit topologies, while mosfet design on optimizing size of components.