You have to do a simple thing called MOSFET characterization. You basically vary VDS and VGS to get a set of I-V curves. From those you can extract all the process parameters needed for your hand calculations.
The data you see in those .scs files is for BSIM3v3. You see, MOSFETs are represented mathematically using the BSIM model. The data you see there is different for different processes (180nm, 0.35u, ST, TSMC etc). That data is given by the fab guys to represent how your transistors will work when you use their fab.
That data is plugged into the BSIM model by the simulator to simulate the behavior of the MOSFET. You can also get the process parameters from the .scs file by using the BSIM equations, google for them.