... How can I drive N2 into saturation also.
That would depend on his process.Notice : The bulk node of nmos devices should be connected to the substrate global network (generally sub!) and not to gnd!
Dear Khisha
Hi
I should say an important thing to you about saturation region:
In mosfets: when VGS become near 15 volts , your mosfet will work in saturation region . and about IGBT s too(GE =15) . and about BJT s : when BE voltage become 0.6 volt for silicon ( with enough base current) your BJT will work in saturation region.
About J fet= when VGS = Zero ( n type) your current will be IDSS ( will saturate )
Best wishes
Goldsmith
Dear sutapanaki
Hi
In mos when the GS become short circuit , you can say that the mosfet is saturated. and in bjt s , if CE junction become short circuit , you can say that the BJT is saturated. here , my mean by short circuit , is not that the elements become destroy my mean is that their performance as a simple switch.
All the best
Goldsmith
... compared to the emitter, you mean, of course.What I meant was that for the bjt to be in saturation we need the base higher than ~0.6V compared to the collector.
That's really not what one would understand as BJT saturation :roll:... if base is 1V and collector is less than 9.4V, then yes, it is in saturation.
That's really not what one would understand as BJT saturation :roll:
Then can you please explain what is understood when we say the bjt is saturation and what when said it is in active region?
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