menewbie
Junior Member level 1
I am trying to decrease the mismatch in MOSFET as much as possible....Therefore, it's a good idea to make the source and drain match with each other. However, when device processors implant the source and drain, they implant them from an angle instead of 90 degrees. this angle will cause some area of drain and source to be covered by the insulator. However, since they are implanted from an angle, more area of the drain is covered by the insulator. Less area of the source is covered by the insulator. Thus creating mismatch. I heard that mirror symmetry is gonna be horrible to deal with this problem. Therefore, I am wondering is there any good solution to solve this mismatch problem???