Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.
electro migration occurs when current density in 1 metal layer is very high.......that can provide electrons flowing through that metal a large amount of energy, thus a electron leaves the metal causing holes....
these holes can lead to open....thus destroying the metal.
FIX:-
first find the current that a particular metal is supposed to carry.........then using the DRM find the minimum width of the metal needed to carry that amount of current.
another way is to split the current in 2 or more parallel paths, this way you can avoid use of a single thick layer of metal.
electro migration occurs when current density in 1 metal layer is very high.......that can provide electrons flowing through that metal a large amount of energy, thus a electron leaves the metal causing holes....
these holes can lead to open....thus destroying the metal.
FIX:-
first find the current that a particular metal is supposed to carry.........then using the DRM find the minimum width of the metal needed to carry that amount of current.
another way is to split the current in 2 or more parallel paths, this way you can avoid use of a single thick layer of metal.
AFAIK,
to address electromigration issue, metal widths are increased, and via count is increased. we cannot make via fatter, as there is a max via width rule from foundry.
hi
i have a question.i use 1um width metal1 wire to carry 4mA dc current .the design manul of my technology says that 1um width metal1 carry 0.8mA in the electromigration section of the DRM. what i want to know is ,can the circuit work for a short while .can the thin 1um metal1 becomes open as soon as i power the chip up? or my chip can't work for a long time only?
hi
Rules are given to protect against two types of current-induced fails: standard EM and local heating enhanced EM:
- For standard EM the rules define
- a maximum DC current Idc: idc < Idc
- For local-heating enhanced EM the rules define
- a maximum RMS current Irms: irms < Irms
For any current signal i(t) both conditions (idc < Idc, irms < Irms) have to be fulfilled.
---> thin 1um metal1 becomes open as soon as u power the chip up.
This site uses cookies to help personalise content, tailor your experience and to keep you logged in if you register.
By continuing to use this site, you are consenting to our use of cookies.
