I have read some tutorials. I saw in the DC simulation controller that in Other, they can set something like M1.Gm to get Gm for the MOSFET but I dont know how to set it. Also in TSMC library, how can I get Gm, Cox, Tox for the MOSFET in ADS, thank you very much.
in @DS U can use a meas equation component
and gm=GM.mosfet1
mosfet 1 is the name of the transistor
or u can make it by using differentiation of IDs with respect to VGS
and about cox u can see the examples in RFIC , the vco with mos varactor there is a design using s parameter simulation to find cin of the mos
but tox , is a parameter of the technology i think for TSMC .18 it about 4nm
Thank you very much, it works, actually gm=M1.Gm BTW how can i know what parameters in the model that I can extract??? I have tried help but it does not say much about that. it seems to me that i can have something like, M1.xxx to get the paraneters but i wnat but i dont know how many and what xxx ??
About RFIC example, i run the schemetic Biased_FAT_CAP_Test, i saw the Cin, can i also use this for Cout?? Actualy, i would like to design a distributed amplifier. I wonder that can i use those Cin and Cout from that technique to get Cin and Cout for the distributed amplifier. thank you
Plot Ids-Vds curves. To calculate gm, use the command
gm = diff(Ids) in the data display. This will give you the derivatice of Ids w.r.t. Vgs which is basically, gm.
Double click DC Pallete->Parameters Tab->check Detailed Device Operating point Level., then go to graph window, add a rectangular window and you finally see gm and someotheruseful intrinsic parameters.You can plot anything vs anything.Be careful with indepented vectors .Must be same and equal!!!