Re: I Need Your Help
Hi
You are given a specified current of 1mA in the the first transistor and a source resistor of 4KΩ. You can first calculate the drain resistance simply by saying
V_drain=I*R_source+Vds.....where Vds is equal to 4V.
So the resitance is R_drain=(Vdd-V_drain)/I=( 10-8 )/1mA=2KΩ
Now if you use the equation for a FET in saturated region:
I=½*Kn*(Vgs-Vtn)². Vgs=Gate-Source voltage
The unknow is Vgs, you can solve it by calculator and it will give you two solutions, only one is correct.
With the chosen Vgs, you a use this to calculate the two resistors at the gate....but this is where I have a problem, as I cannot get a valid solution.
The same approach can be used on the second branch.
But as mentioned in the previous post, try to simulate....I would like to know the answer if you do.
Regards