The Cds of the low side FET might be overcoming the
gate drive strength on the ring overshoots; too high
an edge rate will increase the ring amplitude, too much
output capacitance at the switching node will increase
the ring energy and duration.
Weak decoupling that is drawn down by the output is
also a possibility, and any ground inductance at the
driver (or relative to the low side switch source) can
also make the driver bounce relative to the prime
powertrain ground-point.