Thanks,
The thing is, the “Ciss” of the C2M0080120D FET is 950pF (Ciss = Cgs+Cgd).
I ran the simulation with a 950pF capacitor instead and yes I can see its ringing too high at the gate....I will investigate, Thankyou FvM
C2M0080120D SiC FET datasheet
**broken link removed**
I have been passed this circuit by other engineers who have now left....they told me that the 18v zener that they had on the gate had to be removed as it was repeatedly dying.
- - - Updated - - -
Why is circuit A gate drive circuit better than circuit B? (attached, schem and LTspice sim). -They both have the same series resistance, but circuit A is better...it suffers much
less amplitude of ringing at the FET gate, and manages to
always switch the FET gate to zero volts when OFF, whereas
circuit B, for a time (at 480us), does not manage to switch the FET
gate OFF to zero volts.
Why is A so much better than B?, -they have the same series resistance