Hi
We wish to use the 760301302 gate drive transformer for our two transistor forward. (373VDC input) It says (below)
its ok for 250Vrms operation and so should be OK.
hello, i wish to use this pulse transformer to turn a mosfet on and off in a SMPS. https://www.farnell.com/datasheets/85907.pdf (i wish to use the 1:1 one, top line) Unfortunately, near the top, it says that its Maximum Pulse current is 200mA. This appears to be bad for me as a MOSFET is...
www.edaboard.com
ive always taken it that eg pulse transformer primary FET drive for 2 Tran forward with say 400VDC input was to be done with interleave winding and not bifilar. Would you agree? (bifilar = bad because too high capacitance and too mch voltage stress to coils.
As you know, even then one is right at the limit of low leakage inductance possibility.
It is rated for 102 V.uS, at 80V max on any wdg, in this case only for 1.275uS each way - with presumably lots of dead time in between ( else core losses ) - these 2 ratings ( 80V & 102V.uS ) show you the limit for pulse applications
It should be fine for 400V high side GD - the 4 uH leakage is a pointer to the fact there is some insulation between pri and sec.
Thanks,, i hadnt even started to think that they would consider the gate drive input being needed for any more than a normal FET or SiCFET drive...ie, 20V max.
But yes i suppose some applications will have people shovelling an 80V pulse through the transformer. -Thankyou