Kerrowman
Member level 4
- Joined
- Oct 12, 2021
- Messages
- 75
- Helped
- 0
- Reputation
- 0
- Reaction score
- 2
- Trophy points
- 8
- Location
- West Penwith
- Activity points
- 578
You raise some interesting points. Some background might help here.If you want highest dV/dt, dI/dt you should consider eGaN
devices.
These have gates you can drive with a stiff 5V driver - for
small ones, just parallel an octal bus buffer and you can
see ~2A peak drive from HCS or ACS series logic. For the
home experimenter I'd recommend GaN Systems or other
leaded-package types.
But I'd bet that busting sulfate off battery plates could be
done as well with microsecond risetimes, as nanoseconds.
Are you convinced (by data) that you're really being limited
by risetime, rather than pulse height or pulse energy (which
might argue to change the inductor, rather than the switch)?
SGND is the voltage reference for the input signals. It´s also the reference for VCC.SGND is connected at pin 7 from the Hall sensor ground.
No. Don´t mix your PWM frequency with the high frequency component in the fast edge. A high rise rate in the edge (thats what you want) (mathematically: dV/dt) will have frequency components in the 100MHz range. PWM frequency has nothing to do with this.You are right that the GAN FET and driver can handle much more speed than I need which is only 200-300 Hz.
I thought so. Thus I wrote my recommendation in post#2. This is the way i also had to go if I were in your place.I can probably do well with a different FET
Usually a triangle.What is the symbol for a driver chip?
Thanks.Also keep in mind not all Caps, for same capacitiance, yield equal
ESR performance, so choose wisely.
View attachment 172438
Polymer caps for bulk applications excellent. Thats the OS-CON type shown above.
Regards, Dana.
We use cookies and similar technologies for the following purposes:
Do you accept cookies and these technologies?
We use cookies and similar technologies for the following purposes:
Do you accept cookies and these technologies?