rameshprakash
Newbie level 4
Hi,
I am trying to estimate the drain resistance of a transistor (due to the increased clearance (~5um) of drain contacts to the poly) to model it in my simulation.
My transistor size is 5 X (W=30um, L=0.5um)
I want to know how should I go with estimation of W,L for the resistance for the diffusion.
Since the spacing is 5 um wide (between the drain & gate) - I should consider W = 5 um, or I should consider the length as 5 um.
If the diffusion resistivity is 150 ohm/sq.
So the effective resistance = 150 * L / W
Can anyone help me with this?
Thanks,
Ramesh
I am trying to estimate the drain resistance of a transistor (due to the increased clearance (~5um) of drain contacts to the poly) to model it in my simulation.
My transistor size is 5 X (W=30um, L=0.5um)
I want to know how should I go with estimation of W,L for the resistance for the diffusion.
Since the spacing is 5 um wide (between the drain & gate) - I should consider W = 5 um, or I should consider the length as 5 um.
If the diffusion resistivity is 150 ohm/sq.
So the effective resistance = 150 * L / W
Can anyone help me with this?
Thanks,
Ramesh