abishek
Member level 1

when an intinsic semiconductor is doped.......the no of holes/electrons increase....but the material is still neutral.....is it because of the ions formed( donors becoming + bcos they lose e and acceptors - bcos they accept an electron??)....
when a donor loses an electron is a hole formed or only a immoblie ion???
also with usual notations....y is n.p = n_i^2......is i bcos of the fermi dirac distribuiton??
when a donor loses an electron is a hole formed or only a immoblie ion???
also with usual notations....y is n.p = n_i^2......is i bcos of the fermi dirac distribuiton??