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doubt in basics of doping

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abishek

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when an intinsic semiconductor is doped.......the no of holes/electrons increase....but the material is still neutral.....is it because of the ions formed( donors becoming + bcos they lose e and acceptors - bcos they accept an electron??)....

when a donor loses an electron is a hole formed or only a immoblie ion???

also with usual notations....y is n.p = n_i^2......is i bcos of the fermi dirac distribuiton??
 

abishek said:
when an intinsic semiconductor is doped.......the no of holes/electrons increase....but the material is still neutral.....is it because of the ions formed( donors becoming + bcos they lose e and acceptors - bcos they accept an electron??)....
Yes, you are right.

when a donor loses an electron is a hole formed or only a immoblie ion???
A donor losing an electron becomes an immobile ion.
 

when ion looses electron(ie the donor ion looses electron) holes are not formed.Holes are formed only when elctrons in the semiconductor lattice are removed(either by acceptors or driven by a field).
 

neils_arm_strong said:
when ion looses electron(ie the donor ion looses electron) holes are not formed.Holes are formed only when elctrons in the semiconductor lattice are removed(either by acceptors or driven by a field).

And on the other hand, these ions become scattering centers
 

Hi~~

I think the number of the ionized impurity atoms (whether + or -) is equal to the number of charge carriers (whether - or +).
 

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