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doubt in basics of doping

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abishek

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when an intinsic semiconductor is doped.......the no of holes/electrons increase....but the material is still neutral.....is it because of the ions formed( donors becoming + bcos they lose e and acceptors - bcos they accept an electron??)....

when a donor loses an electron is a hole formed or only a immoblie ion???

also with usual notations....y is n.p = n_i^2......is i bcos of the fermi dirac distribuiton??
 

Hughes

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abishek said:
when an intinsic semiconductor is doped.......the no of holes/electrons increase....but the material is still neutral.....is it because of the ions formed( donors becoming + bcos they lose e and acceptors - bcos they accept an electron??)....
Yes, you are right.

when a donor loses an electron is a hole formed or only a immoblie ion???
A donor losing an electron becomes an immobile ion.
 

neils_arm_strong

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when ion looses electron(ie the donor ion looses electron) holes are not formed.Holes are formed only when elctrons in the semiconductor lattice are removed(either by acceptors or driven by a field).
 

japholix

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neils_arm_strong said:
when ion looses electron(ie the donor ion looses electron) holes are not formed.Holes are formed only when elctrons in the semiconductor lattice are removed(either by acceptors or driven by a field).
And on the other hand, these ions become scattering centers
 

yjkwon57

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Hi~~

I think the number of the ionized impurity atoms (whether + or -) is equal to the number of charge carriers (whether - or +).
 

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