Nov 23, 2006 #1 S spartacus2 Newbie level 6 Joined Apr 1, 2006 Messages 14 Helped 0 Reputation 0 Reaction score 0 Trophy points 1,281 Activity points 1,459 In SRAM cells, we usually precharge the bit lines. We may use the p-type devices to precharge to full VDD. But does it improve only the writes and reads for logic 1, and makes slow memory access for logic 0? How can we handle the situation?
In SRAM cells, we usually precharge the bit lines. We may use the p-type devices to precharge to full VDD. But does it improve only the writes and reads for logic 1, and makes slow memory access for logic 0? How can we handle the situation?
Nov 24, 2006 #2 L laglead Full Member level 5 Joined Feb 21, 2006 Messages 262 Helped 22 Reputation 44 Reaction score 8 Trophy points 1,298 Activity points 2,693 Re: Static RAM cells some design charge the bit line to vdd/2 instead of vdd