At this power rating, I think MOSFET is best.
---------- Post added at 00:31 ---------- Previous post was at 00:29 ----------
This means that it can dissipate maximum 60W energy. If you can fully turn on the MOSFET (applying >8(to 10)V at the gate), the conduction loss in the MOSFET = I²R - I being the current through the MOSFET and R being the on-state drain-to-source resistance [Rds(ON) specified in the datasheet]. The total loss would be slightly higher than the conduction loss (total loss includes other losses such as switching loss).
---------- Post added at 00:33 ---------- Previous post was at 00:31 ----------
You can not use IRFZ44N as the maximum drain-to-source voltage it can withstand is 55V. So, if you convert 220V to DC, it becomes 220√2 = 311VDC. This will almost instantly destroy the IRFZ44N.
Hope this helps.
Tahmid.
---------- Post added at 00:37 ---------- Previous post was at 00:33 ----------
MOSFETs are better than BJTs (especially at higher voltages) because they usually require lower current than BJTs for turning on, but more importantly have lower loss as the power dissipation across a BJT is likely to be higher as it has a pretty large VCE saturation voltage which results in a higher loss (usually) than that in a MOSFET. IGBTs are better than BJTs in this respect, but I don't think you will benefit much from using IGBTs at such low powers.
By the way, IRFZ44N has a maximum power dissipation value of 94W @ 25°C (from the IR datasheet).
Hope this helps.
Tahmid.