cupoftea
Advanced Member level 6
Hi,
Just looked through many 900-1200V SiC NFET datasheets.
Eg SiC NFET G3R75MT12D (1200V)
They all feature an internal diode with trr of approx. 25ns or so. Also, the internal diode has vf of around 4V or so.
…Though when you look through 1200v SiC diode datasheets, they don’t even show a trr value, and for same conditions have vf of some 2v or so.
Is this a common fact?...that discrete SiC diodes have lower vf and lower trr than the internal SiC diodes inside SiC nfets?
I think if SiC NFETs are to be used in LLC converters, it would be worth paralleling them with a discrete sic diode? (no need to heatsink the added sic diode)
SiC diode GC02MPS12-220 (1200V)
Just looked through many 900-1200V SiC NFET datasheets.
Eg SiC NFET G3R75MT12D (1200V)
They all feature an internal diode with trr of approx. 25ns or so. Also, the internal diode has vf of around 4V or so.
…Though when you look through 1200v SiC diode datasheets, they don’t even show a trr value, and for same conditions have vf of some 2v or so.
Is this a common fact?...that discrete SiC diodes have lower vf and lower trr than the internal SiC diodes inside SiC nfets?
I think if SiC NFETs are to be used in LLC converters, it would be worth paralleling them with a discrete sic diode? (no need to heatsink the added sic diode)
SiC diode GC02MPS12-220 (1200V)