Can anybody explain what is the difference between BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor and the 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor? and the various applications
Can anybody explain what is the difference between BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor and the 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor? and the various applications
the two devices seem to be very similar in most aspects (looking at the spec-sheet), except that the BSS138 has a slightly lower Vgs(th)= 1.2v as compared to 2N7002's which is 2.1v