Thank you. I studied on some books on analog IC design, mostly on Razavi and Baker, or device physics on Sze and Colinge, but they explain more on the physics of MOSFET and how to get to the equations for current than on the extraction of parameter for a given technology.
I have also the Gray-Mayer and Allen books, but I've never read that part.
Could be that this kind procedures are strictly related to the model itself?
I mean that, instead of searching for general ideas and concepts, I should take the mathematical formulation for the drain current, and try to find the way to process the acquired data of Id(Vds) and Id(Vgs) in order to extract the DC parameters, for example.
Does it make sense?