Welcome to our site! EDAboard.com is an international Electronics Discussion Forum focused on EDA software, circuits, schematics, books, theory, papers, asic, pld, 8051, DSP, Network, RF, Analog Design, PCB, Service Manuals... and a whole lot more! To participate you need to register. Registration is free. Click here to register now.
Major carriers to flow across the junction are further blocked and minor carriers are allowed to flow more easily. The number of carriers to flow across the junction can be determined statistically.
This is correct.
You can look at the PN junction as two plat of a capacitor(Actually for a step junction the C(V) expression is the same). There is a depletion range for a PN junction without any bias voltage. The high E feild rejects the electrons and holes back and stop the difusion. So without any bias the E feild force is equal to the difusion "force" . When you reverse bias the junction, the depletion range is increased (the two capacitor plats are moved farther) and the capacitance is reduced. Varactor is a PN junction that its capacitance goes down as you increas the reverse bias.
C(V) curve is not linear at all. For step junction C(V) acts as 1/V^0.5.
There are complicated PN junctions for different applications and their C(V) is of course different. For example SRD (step recovery diode) there is very sharp change of the C as a function of V in order to create a step function that couses to a comb of harmonics to very high frequency. There are different kind of varactors (abrupt, hiperabrupt, linear etc.) that have different C(V) curve but for all of them C goes down as te reverse bias voltage goes up.
Another scenario is where your p-region, where the bias is being applied, has a much lower concentration with respect to the n-region. Since space-charge neutrality must be met, you will see very little to no change in depletion capacitance with increasing reverse bias voltage.
If the reverse bias of a p-n junction is incresed the lengh of depletion area is incresed also. As you know if the distance between the plates of a capacitor is incresed, the value of capacitor whould be reduced. this efect can be simillary happens about the depletion capacitor. so if the reverse bias voltage of p-n junction is incresed depletion capacitor would be decreased. the relation between C and V is like this:
C proprtional 1/(square root of V)
This site uses cookies to help personalise content, tailor your experience and to keep you logged in if you register.
By continuing to use this site, you are consenting to our use of cookies.