I have a voltage source of 28 V.Is it possible in biasing FET we place no resitor at drain and make Vds same as Vdd because I need Vds=28V. Or it will not work and not a general practice.Please tell me.
I have to bias the FET at Vds=28 V.but the maximum supply limit is also 28 V.Therefore, I have to design biasing topology in such a way that no voltage drop before drain. Is it possible that I connect the supply directly to the drain to prevent voltage drop or it is not feasible.?
In my opinion you may have but your device should have capabilities to handle that much electric field between drain and source.
this large electric field may damage your transistor.
In my opinion you may have but your device should have capabilities to handle that much electric field between drain and source.
this large electric field may damage your transistor.