This looks wrong. I have also done gm/id vs. Vgs for N and P MOS transistors in 16nm TSMC and I don't see this behavior. In my case both types of transistors see a rising trend in gm/id as Vgs decreases and reach a value of about 30 for Vgs=0. I have not done this for technologies below 16nm.
thank you. do you have FINFET 16nm TSMC library with independent gates now ? can you send for me?
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no. i use bsim from berkeley. did you plot curves in finfet technology?
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i plotted curves in 55nm finfet technology. did you plot curves in finfet technology?
If you mean if you can find finfet models - you can't unless you work with a design kit for that technology.
If you mean finding information about finfet devices - well, easiest is to search the internet.