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Insufficient gate drive voltage for high side transistors. You are applying 5V relative to ground but 5V relative to respective source terminal is required.
Common to simulate with an individual source for each gate drive. Unlike real life there is no penalty for fully isolated gate drive in the simulated. Connect the gate drive source across Vgs.
I wouldn't even bother using real FET models, at least to start. Just use voltage controlled switches in place of the FETs (if your load is inductive, make sure to put diodes across the switches). Simulation time will be much faster. Later when you want to look at switching behavior in more detail you can drop in FET models.
Well if the load really is just a capacitance, then no the flywheel diodes don't matter.Hi, actually the load will be capacitive (piezoelectric transducer). Do you also recommend the use of flywheel diodes?
Well if the load really is just a capacitance, then no the flywheel diodes don't matter.
Capacitive loads have their own problems though, mainly large current spikes and switching losses. I assume you will actually want to use an LC filter between the FETs and the piezo in order to filter out the ripple. And then the inductance in that filter will necessitate the flywheel diodes again...