I would add to the list, some model vs data review especially regarding params that MOS models aren't so great at covering - leakage / GIDL / DIBL, gate and drain kink / curl, etc. - realizing this data may not willingly be shared and it's presentation in PDK docs is meant to sell the "ready for prime time" story that the modeling engineers want, not show you the "warts". I have seen modeling reports where the IVs step right over mid-Vds*mid-Vgs OP region where SOI drain kink "lives" - after debugging a comparator that turned out to be ruined by this phenomenon with no hint in the sims.