Hello eriklI don't think you can get an exact replacement of the 2 CCCS's, because you have different reference points for the controlling and the controlled current parts. In order to circumvent this problem you'd need additional current mirroring, s. e.g. the following image:
Here, the original currents (through T1, T3) are conveyed via 4 mirror transistors, each (T2-T5-T6-T7 and T4-T10-T11-T12) to the secondary current sources (T8, T13) in order to achieve the different reference points. This, however, means that you create additional currents between the 2 primary nodes.
I'm not even sure if such circuit would work at all.
now how is it possible simulation of the input impedance of this circuit?
(it is a two-port circuit that convert R3(1ohm) at port2 to negative impedance in port1)
OK, what you mean from reasonable voltage? Negative voltage?Now this depends on your simulation capabilities and skills - I have no experience with the ADS simulation system. And I must admit I didn't think about the input impedance measurement.
In my simulation environment, I'd try and use a current source (it has infinite Ri) instead of the voltage source, and change the current until I get reasonable voltages at the top nodes. The current source shouldn't affect the input impedance at all.
OK, what you mean from reasonable voltage? Negative voltage?
Excuse me Erikl, I am newbieTop nodes! Negative voltage? Tell me: what do you know about analog MOSFET circuits at all?
In your circuit, positive voltage of course, see the (correct) polarity of the power supply connection in your own JPG above!
Depending on process and threshold voltages something between +1 .. +5V.
BTW: M7 & M11 in your above JPG image don't provide the required current transmission ratio of G=1.5 (SRC2)
Yes, I know this from your other thread.I want to simulate this circuit:
Yes, your idea is ok. Just go on with your simulation! I've told you all what's necessary for it.... this 2-port is Negative Impedance Converter and for this I try to simulate the input impedance of it
I would be glad you help me and tell me is my idea correct or no
now I locate a current source instead of voltage source between the up and down nodes, but I dont know how I select transistors width that be in saturation region and current source valueYes, I know this from your other thread.
Yes, your idea is ok. Just go on with your simulation! I've told you all what's necessary for it.
ok but you have exprince, I would be glad you give me good estimation
I use designkit of TSMC 0.13um
Thanks dear erikl, designkit of TSMC 0.18um is OK too if you have thisUnfortunately I don't have this design kit. AFAIR it contains transistors with |VTH0| = 0.25 .. 0.7V . So you should at least tell me the VTH0 values of the MOSFETs you want to use (find in your models). And their technology currents, if possible (that's the saturation current of a W/L=1 transistor, find those in your PDK docu).
If you don't provide these values, I could only give you a rather rough estimation, which possibly wouldn't fit at all with your models.