Unlike virtually every other active device, the power MOSFET is unusual in that its schematic symbol includes a parasitic device – the body diode. The body diode is intrinsic to the device’s structure.
Well - it's not the same diode - but - somewhat similar, the body diode or intrinsic diode in a mosfet is a by product of the easiest construction ( at is the inherent parasitic BJT ) - this is also true of the op-amp ( and many other IC's ) that have a substrate of typically N material, but can be P too ), and diffuse "wells" into it to form the parts of the IC - there's no free lunch in IC wafer fabrication
[ p.s. this inherent but normally reversed biased diode in the IC often causes "latch-up" issues if somehow the voltage on the substrate goes high enough relative to other pins for conduction to happen - in the old days the substrate connection was some times brought out to connect it to a low potential to ensure this never happened ].