ALU1AB
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Hi all,
To my understanding, unlike normal MOSFETs, discrete power MOSFETS have asymmetric structure.
But is it still ok to swap drain and source? (source at higher potential than drain)
Will I_D equations for triode(linear) & saturation region still apply?
Thanks
To my understanding, unlike normal MOSFETs, discrete power MOSFETS have asymmetric structure.
But is it still ok to swap drain and source? (source at higher potential than drain)
Will I_D equations for triode(linear) & saturation region still apply?
Thanks