Activate Impact Ionization Model for Vertical IMOS

[Avenger888]

Currently I designing Vertical IMOS using Sentaurus Structure Editor.
The problem is, I having problem in Sentaurus Device, which the physic part. How do I turn on (activate) the impact ionization model.
Compared to the articles, my Subthreshold swing for the device so much bigger. Someone please help me, your advice is crucial. :roll:

 

[majkl85]

Basically you need to edit your Phiscs section so it includes the following:

Recombination(
Avalanche(ElectricField)
eAvalanche(vanOverstraeten)
hAvalanche(vanOverstraeten)
)

This should do the job. You can also choose different models for holes and electrons independently. As far as I remember, van Overstraeten is the default and other options include Okuto, UniBo, UniBo2...

Regards

 

[Avenger888]

I have edit the physics part just like the script you give me, but the Subthreshold swing does not become steeper enough. What do I need to change, to get steeper Subthreshold.