Currently I designing Vertical IMOS using Sentaurus Structure Editor.
The problem is, I having problem in Sentaurus Device, which the physic part. How do I turn on (activate) the impact ionization model.
Compared to the articles, my Subthreshold swing for the device so much bigger. Someone please help me, your advice is crucial. :roll:
This should do the job. You can also choose different models for holes and electrons independently. As far as I remember, van Overstraeten is the default and other options include Okuto, UniBo, UniBo2...
I have edit the physics part just like the script you give me, but the Subthreshold swing does not become steeper enough. What do I need to change, to get steeper Subthreshold.