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de-embedding device leads from measured s-parameters of the device

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afz23

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I am designing an amplifier at 12 GHz,using infineon
Cfy25 device.

Vendor supplied s-param were extracted in following
Manner,using FR4 board.

Note: reference plane position at device lead end,
Leads are 1.1mm long

IMG_20150217_003050.jpg

Since I am using another substrate,Alumina,I need
S-param ,at the package end ,as shown below
IMG_20150217_003115.jpg

I simulated the device leads separately and used ADS
De-embbeding boxes as shown below and extract DUT s-param
Experts please look into this and give your valuable suggestions,to solve this issue.

Because I do not know how ADS deals with s-param
De-embedding,whether it transforms to T parameters
And

IMG_20150217_011712.jpg

But this method did not work, the resulting s-param
Were totally changed,not usable as leads should change little phase and magnitude of s-param,not the entire frequency response itself.

For de-embedding we use following matrix relation
Using transmission parametets
 

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  • IMG_20150217_003128.jpg
    IMG_20150217_003128.jpg
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Last edited:

Hard to believe that Infineon extracted S-parameters at 12GHz using FR4.
 

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